Low threshold and high speed short cavity distributed feedback hybrid silicon lasers
نویسندگان
چکیده
منابع مشابه
Design of phase-shifted hybrid silicon distributed feedback lasers.
We present data on the design and performance analysis of phase shifted distributed feedback (DFB) lasers on the hybrid silicon platform. The lasing wavelength for various input currents and temperatures, for devices with standard quarter-wavelength, 60 μm and 120 μm-long phase shift are compared for mode stability and output power. The pros and cons of including a large phase shift region in t...
متن کاملHigh speed modulation of hybrid silicon evanescent lasers
High-speed modulation results and analysis of hybrid silicon evanescent lasers is described. It should be possible to achieve a 3dB-bandwidth over 50 GHz and a data rate of 50 Gbit/s. 2009 Optical Society of America OCIS codes: (130.3120) Integrated optics devices; (130.3130) Integrated optics materials
متن کاملSilicon-integrated short-wavelength hybrid-cavity VCSEL.
We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based "half-VCSEL" has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field exten...
متن کاملCsPbBr3 Perovskite Quantum Dot Vertical Cavity Lasers with Low Threshold and High Stability
All-inorganic cesium lead bromide (CsPbBr3) perovskite quantum dots (QDs) have recently emerged as highly promising solution-processed materials for nextgeneration light-emitting applications. They combine the advantages of QD and perovskite materials, which makes them an attractive platform for achieving high optical gain with high stability. Here, we report an ultralow lasing threshold (0.39 ...
متن کاملHeterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon
Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recent...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2014
ISSN: 1094-4087
DOI: 10.1364/oe.22.010202